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BC80716E6327 Infineon Transistor BJT PNP 45V 0.5A 3-Pin SOT-23 T/R (BC807-16E6327)

List Price: $0.18
Our Price: $0.14
You Save: $0.04 (22%)

Stock: 90000

BC80716E6327 Infineon Transistor BJT PNP 45V 0.5A 3-Pin SOT-23 T/R

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    BC80716E6327 INFINEON/SIEMENS BC807-16 E6327 Transistor General Purpose BJT PNP 45V 0.5A 3-Pin SOT-23 T/R 3000PCS


    Manufacturer: Infineon
    Product Category: Bipolar Transistors - BJT
    RoHS: RoHS Compliant Details
    Brand: Infineon Technologies
    Configuration: Single
    Transistor Polarity: PNP
    Collector- Base Voltage VCBO: 50 V
    Collector- Emitter Voltage VCEO Max: 45 V
    Emitter- Base Voltage VEBO: 5 V
    Maximum DC Collector Current: 0.5 A
    Gain Bandwidth Product fT: 200 MHz (Typ)
    Maximum Operating Temperature: + 150 C
    Mounting Style: SMD/SMT
    Package / Case: SOT-23-3
    Minimum Operating Temperature: - 65 C
    Packaging: Reel
    Pd - Power Dissipation: 330 mW
    Series: BC807
    Factory Pack Quantity: 1
    Part # Aliases: BC80716E6327HTSA1

    For general AF applications High collector current High current gain Low collector-emitter saturation voltage Comlementary types: BC817, BC818 (NPN)
    Collector-emitter voltage Collector-base voltage Emitter-base voltage

    DC collector current Peak collector current Base current Peak base current Total power dissipation, 79 °C Junction temperature Storage temperature
    Thermal Resistance Junction - soldering point 1) RthJS
    1For calculation of R thJA please refer to Application Note Thermal Resistance

    Electrical Characteristics = 25°C, unless otherwise specified. Parameter DC Characteristics Collector-emitter breakdown voltage = 10 mA, = 0 Collector-base breakdown voltage = 10 µA, = 0 Emitter-base breakdown voltage = 10 µA, = 0 Collector cutoff current VCB = 0 Collector cutoff current VCB 150 °C Emitter cutoff current VEB 0 DC current gain = 100 mA, VCE FE-grp. 16 h FE-grp. 25 h FE-grp. 40 DC current gain = 500 mA, VCE 1 V Collector-emitter saturation = 500 mA, 50 mA Base-emitter saturation voltage = 500 mA, 50 mA VBEsat VCEsat hFE IEBO ICBO V(BR)CEO Symbol min. Values typ. max. Unit

    Electrical Characteristics = 25°C, unless otherwise specified. Symbol Values Parameter min. AC Characteristics Transition frequency = 50 mA, VCE = 100 MHz Collector-base capacitance VCB = 1 MHz Emitter-base capacitance VEB = 1 MHz Ceb 60 Ccb fT 200 typ. max.

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    Online Order Link: BC807-16E6327
    IBS Electronics Part : BC807-16E6327

    IBS Electronics distributes genuine BC80716E6327 Infineon Transistor BJT PNP 45V 0.5A 3-Pin SOT-23 T/R  BC807-16E6327. All items are authentic with manufacturer's packaging. IBS Electronics has been in business since 1981 selling BC80716E6327 Infineon Transistor BJT PNP 45V 0.5A 3-Pin SOT-23 T/R  BC807-16E6327 and thousands of other brand name products, with most items shipping the same day.
    Join thousands of satisfied customers and buy your BC80716E6327 Infineon Transistor BJT PNP 45V 0.5A 3-Pin SOT-23 T/R  BC807-16E6327 with complete satisfaction. A IBS Electronics 30 Day Money Back Guarantee is included with every BC80716E6327 Infineon Transistor BJT PNP 45V 0.5A 3-Pin SOT-23 T/R for secure, risk-free online shopping.


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